Pulsed Magnetic Field Studies of Magnetophonon Resonance Amplitudes in GaAs-GaAlAs Heterojunctions

D.R. Leadley and R.J. Nicholas,
Clarendon Laboratory, Parks Road, Oxford. OX1 3PU, U.K.

L. van Bockstal and F. Herlach,
Dept. of Physics, KU Leuven, Belgium.

J.J. Harris and C.T. Foxon,
Philips Research Laboratories, Redhill, Surrey. RH1 5HA, U.K.

Magnetophonon resonance is studied in GaAs-GaAlAs heterojunctions in steady and pulsed fields up to 36T. The resonance amplitudes are found to depend on the carrier density and a damping factor, \gamma, which is not constant. We find empirical expressions for the amplitude; and for \gamma, which contains terms proportional to T and B^3/2 and is dominated by remote impurity scattering.

High Magnetic Fields in Semiconductor Physics III, ed. G. Landwehr, Springer Series in Solid State Sciences Vol. 101 (Springer, Berlin, 1992), p. 623.